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d a t a sh eet product speci?cation supersedes data of 2003 june 13 2003 sep 30 discrete semiconductors blf2022-90; BLF2022S-90 uhf power ldmos transistors m3d379 m3d461
2003 sep 30 2 philips semiconductors product speci?cation uhf power ldmos transistors blf2022-90; BLF2022S-90 features typical single carrier w-cdma performance at a supply voltage of 28 v and an i dq of 750 ma: C output power = 15 w (av) C gain = 13.0 db C efficiency = 20% C aclr 5 = - 40 dbc easy power control excellent ruggedness high power gain excellent thermal stability designed for broadband operation (2000 to 2200 mhz) internally matched for ease of use. applications rf power amplifiers for w-cdma base stations and multicarrier applications in the 2000 to 2200 mhz frequency range. description 90 w ldmos power transistor for base station applications at frequencies from 2000 to 2200 mhz. pinning - sot502a pinning - sot502b pin description 1 drain 2 gate 3 source; connected to ?ange handbook, halfpage top view mbk394 1 2 3 fig.1 simplified outline sot502a (blf2022-90). pin description 1 drain 2 gate 3 source; connected to ?ange 1 top view mbl105 2 3 fig.2 simplified outline sot502b (BLF2022S-90). quick reference data typical rf performance at t h =25 c in a common source class-ab test circuit. mode of operation f (mhz) v ds (v) i dq (ma) p l (w) g p (db) h d (%) d im (dbc) aclr 5 (dbc) 2-tone, class-ab f 1 = 2170; f 2 = 2170.1 28 750 90 (pep) 12.2 35 - 28 - single carrier w-cdma 2140 28 750 15 (av) 13.0 20 -- 40 caution this product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. for further information, refer to philips specs.: snw-eq-608, snw-fq-302a and snw-fq-302b.
2003 sep 30 3 philips semiconductors product speci?cation uhf power ldmos transistors blf2022-90; BLF2022S-90 limiting values in accordance with the absolute maximum rating system (iec 60134). thermal characteristics notes 1. thermal resistance is determined under specified rf operating conditions. 2. depending on mounting conditions. characteristics t j =25 c unless otherwise speci?ed. application information rf performance in a common source class-ab circuit. t h =25 c; r th j-c = 0.65 k/w; unless otherwise speci?ed. note 1. see rf gain grouping table. symbol parameter min. max. unit v ds drain-source voltage - 65 v v gs gate-source voltage - 15 v i d dc drain current - 12 a t stg storage temperature - 65 +150 c t j junction temperature - 200 c symbol parameter conditions value unit r th j-c thermal resistance from junction to case t h =25 c; note 1 0.65 k/w r th c-h thermal resistance from case to heatsink t h =25 c; note 2 0.2 k/w symbol parameter conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0; i d = 2.1 ma 65 -- v v gsth gate-source threshold voltage v ds = 10 v; i d = 210 ma 4.4 - 5.5 v i dss drain-source leakage current v gs = 0; v ds =26v -- 15 m a i dsx on-state drain current v gs =v gsth +9v; v ds =10v 27 -- a i gss gate leakage current v gs = 15 v; v ds =0 -- 38 na g fs forward transconductance v ds = 10 v; i d = 7.5 a - 6.2 - s r dson drain-source on-state resistance v gs =v gsth +9v; i d = 7.5 a - 0.1 -w c rs feedback capacitance v gs = 0; v ds = 26 v; f = 1 mhz - 5.1 - pf mode of operation f (mhz) v ds (v) i dq (ma) p l (w) g p (db) h d (%) d im (dbc) 2-tone, class-ab f 1 = 2170; f 2 = 2170.1 28 750 90 (pep) >11.5 (note 1) >30 - 25
2003 sep 30 4 philips semiconductors product speci?cation uhf power ldmos transistors blf2022-90; BLF2022S-90 rf gain grouping note 1. 0.2 db overlap is allowed for measurement repeatability. 2. for 2-tone at f 1 = 2170 mhz; f 2 = 2170.1 mhz. ruggedness in class-ab operation the blf2022-90/BLF2022S-90 are capable of withstanding a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds = 28 v; i dq = 750 ma; p l = 90 w (cw); f = 2170 mhz. code (1) gain (2) (db) min. max. b 11.5 12.0 c 12.0 12.5 d 12.5 13.0 e 13.0 13.5 handbook, halfpage 15 0 40 120 10 11 12 13 14 80 p l (pep) (w) g p (db) g p h d (%) 50 0 10 20 30 40 mgx398 h d fig.3 power gain and drain efficiency as functions of peak envelope load power; typical values. v ds = 28 v; i dq = 750 ma; t h =25 c; f 1 = 2170 mhz; f 2 = 2170.1 mhz. handbook, halfpage 040 d 3 d 5 d 7 p l (pep) (w) d im (dbc) 80 120 0 - 20 - 60 - 80 - 40 mld838 v ds = 28 v; i dq = 750 ma; t h =25 c; f 1 = 2170 mhz; f 2 = 2170.1 mhz. fig.4 intermodulation distortion as a function of peak envelope load power; typical values.
2003 sep 30 5 philips semiconductors product speci?cation uhf power ldmos transistors blf2022-90; BLF2022S-90 handbook, halfpage 15 0 40 120 10 11 12 13 14 80 p l (pep) (w) g p (db) g p h d (%) 50 0 10 20 30 40 mgx399 h d (2) (3) (1) (4) (5) (6) fig.5 power gain and drain efficiency as functions of peak envelope load power; typical values. v ds = 28 v; t h =25 c; f 1 = 2170 mhz; f 2 = 2170.1 mhz. (1) i dq = 900 ma. (2) i dq = 750 ma. (3) i dq = 600 ma. (4) i dq = 600 ma. (5) i dq = 750 ma. (6) i dq = 900 ma. handbook, halfpage 040 (2) (3) p l (pep) (w) d im (dbc) 80 120 0 - 20 - 60 - 80 - 40 mld840 (1) v ds = 28 v; t h =25 c; f 1 = 2170 mhz; f 2 = 2170.1 mhz. fig.6 third order intermodulation distortion as a function of peak envelope load power; typical values. (1) i dq = 600 ma. (2) i dq = 900 ma. (3) i dq = 750 ma.
2003 sep 30 6 philips semiconductors product speci?cation uhf power ldmos transistors blf2022-90; BLF2022S-90 handbook, halfpage 25 p l(av) (dbm) 15 10 5 0 30 35 45 40 mld833 g p (db) h d (%) g p h d 30 10 20 0 fig.7 power gain and drain efficiency as functions of average load power; typical values. single carrier w-cdma performance. v ds =28v;i dq = 750 ma; t h =25 c; f = 2140 mhz. input signal: 3gpp w-cdma 1-64dpch with 66% clipping; peak to average power ratio: 8.5 db at 0.01% probability on ccdf; channel spacing/bandwidth = 5 mhz / 3.84 mhz. measured in a w-cdma application circuit. handbook, halfpage 25 30 p l(av) (dbm) aclr (dbc) 35 45 0 - 20 - 60 - 80 - 40 40 mld834 aclr 5 aclr 10 fig.8 adjacent channel leakage ratio (aclr 5 and aclr 10 ) as function of average load power; typical values. single carrier w-cdma performance. v ds =28v;i dq = 750 ma; t h =25 c; f = 2140 mhz. input signal: 3gpp w-cdma 1-64dpch with 66% clipping; peak to average power ratio: 8.5 db at 0.01% probability on ccdf; channel spacing/bandwidth = 5 mhz / 3.84 mhz. measured in a w-cdma application circuit.
2003 sep 30 7 philips semiconductors product speci?cation uhf power ldmos transistors blf2022-90; BLF2022S-90 handbook, halfpage 1.8 1.9 f (ghz) z i ( w ) 2.3 4 3 1 0 2 2 x i r i 2.1 2.2 mld835 fig.9 input impedance as a function of frequency (series components); typical values. v ds = 28 v; i d = 750 ma; p l = 90 w; t h =25 c. handbook, halfpage 1.8 1.9 f (ghz) z l ( w ) 2.3 4 2 - 2 - 4 0 2 r l x l 2.1 2.2 mld836 fig.10 load impedance as a function of frequency (series components); typical values. v ds = 28 v; i d = 750 ma; p l = 90 w; t h =25 c. handbook, full pagewidth mgs920 c7 c8 c3 l16 l14 l12 l20 l1 l3 l2 l4 l6 l8 l10 l11 l15 l17 l13 l5 l7 l9 l18 l19 c6 c9 c4 c10 input 50 w output 50 w c1 c2 c11 c12 r2 f1 c13 c14 v dd r1 c5 v gate fig.11 class-ab test circuit at f = 2.2 ghz.
2003 sep 30 8 philips semiconductors product speci?cation uhf power ldmos transistors blf2022-90; BLF2022S-90 list of components; see figs 11 and 12. notes 1. american technical ceramics type 100b or capacitor of same quality. 2. american technical ceramics type 100a or capacitor of same quality. 3. the striplines are on a double copper-clad printed-circuit board with teflon dielectric ( e r = 2.2); thickness 0.79 mm. component description value dimensions catalogue no. c1, c2, c6, c7 tekelec variable capacitor; type 37281 0.4 to 2.5 pf c3, c8 multilayer ceramic chip capacitor; note 1 12 pf c4, c9 multilayer ceramic chip capacitor; note 2 12 pf c5, c12 electrolytic capacitor 10 m f; 100 v 2222 037 59109 c10 multilayer ceramic chip capacitor; note 1 1 nf c11 multilayer ceramic chip capacitor 100 nf 2222 581 16641 c13 tantalum smd capacitor 4.5 m f; 50 v c14 electrolytic capacitor 100 m f; 63 v 2222 037 58101 f1 ferroxcube chip-bead 8ds3/3/8/9-4s2 4330 030 36301 l1 stripline; note 3 50 w 2.9 2.4 mm l2 stripline; note 3 14.5 w 4 11.7 mm l3 stripline; note 3 50 w 3.7 2.4 mm l4 stripline; note 3 6 w 2 30.8 mm l5 stripline; note 3 50 w 3.6 2.4 mm l6 stripline; note 3 9.5 w 3 18.8 mm l7 stripline; note 3 50 w 7.8 2.4 mm l8 stripline; note 3 9.8 w 4 18.3 mm l9 stripline; note 3 24.4 w 5 6.3 mm l10, l11 stripline; note 3 5.1 w 7 37 mm l12 stripline; note 3 25.4 w 10.1 6mm l13 stripline; note 3 5.7 w 2.4 32.8 mm l14 stripline; note 3 25.4 w 7.4 6mm l15 stripline; note 3 11.3 w 2.5 15.6 mm l16 stripline; note 3 50 w 10.8 2.4 mm l17 stripline; note 3 16.1 w 3 10.4 mm l18 stripline; note 3 50 w 2.3 2.4 mm l19 stripline; note 3 50 w 3 2.4 mm l20 stripline; note 3 50 w 5.5 2.4 mm r1, r2 metal ?lm resistor 10 w , 0.6 w 2322 156 11009
2003 sep 30 9 philips semiconductors product speci?cation uhf power ldmos transistors blf2022-90; BLF2022S-90 handbook, full pagewidth input ph990109 output ph990110 mgu538 v dd v gs c5 c6 c7 c8 c9 c10 c11 c12 c13 c14 f1 r2 r1 c4 c3 c1 c2 input ph990109 output ph990110 50 95 50 fig.12 component layout for 2.2 ghz class-ab test circuit. dimensions in mm. the components are situated on one side of the copper-clad printed-circuit board with teflon dielectric ( e r = 2.2), thickness 0.79 mm. the other side is unetched and serves as a ground plane.
2003 sep 30 10 philips semiconductors product speci?cation uhf power ldmos transistors blf2022-90; BLF2022S-90 package outlines references outline version european projection issue date iec jedec jeita sot502a 99-12-28 03-01-10 0 5 10 mm scale flanged ldmost ceramic package; 2 mounting holes; 2 leads sot502a p l a f b d u 2 h q c 1 3 2 d 1 e a c q u 1 c b e 1 m m w 2 unit a mm d b 12.83 12.57 0.15 0.08 20.02 19.61 9.53 9.25 19.94 18.92 9.91 9.65 4.72 3.43 c u 2 0.25 0.51 27.94 qw 2 w 1 f 1.14 0.89 u 1 34.16 33.91 l 5.33 4.32 p 3.38 3.12 q 1.70 1.45 ee 1 9.50 9.30 inches 0.505 0.495 0.006 0.003 0.788 0.772 d 1 19.96 19.66 0.786 0.774 0.375 0.364 0.785 0.745 0.390 0.380 0.186 0.135 0.01 0.02 1.100 0.045 0.035 1.345 1.335 0.210 0.170 0.133 0.123 0.067 0.057 0.374 0.366 h dimensions (millimetre dimensions are derived from the original inch dimensions) w 1 ab m m m
2003 sep 30 11 philips semiconductors product speci?cation uhf power ldmos transistors blf2022-90; BLF2022S-90 references outline version european projection issue date iec jedec jeita sot502b 99-12-28 03-01-10 0 5 10 mm scale earless flanged ldmost ceramic package; 2 leads sot502b a f b d u 2 l h q c 1 3 2 d 1 e d u 1 d e 1 m m w 2 unit a mm d b 12.83 12.57 0.15 0.08 20.02 19.61 9.53 9.25 19.94 18.92 9.91 9.65 4.72 3.43 c u 2 0.25 w 2 f 1.14 0.89 u 1 20.70 20.45 l 5.33 4.32 q 1.70 1.45 ee 1 9.50 9.30 inches 0.505 0.495 0.006 0.003 0.788 0.772 d 1 19.96 19.66 0.786 0.774 0.375 0.364 0.785 0.745 0.390 0.380 0.186 0.135 0.010 0.045 0.035 0.815 0.805 0.210 0.170 0.067 0.057 0.374 0.366 h dimensions (millimetre dimensions are derived from the original inch dimensions)
2003 sep 30 12 philips semiconductors product speci?cation uhf power ldmos transistors blf2022-90; BLF2022S-90 data sheet status notes 1. please consult the most recently issued data sheet before initiating or completing a design. 2. the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the latest information is available on the internet at url http://www.semiconductors.philips.com. 3. for data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. level data sheet status (1) product status (2)(3) definition i objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. ii preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. iii product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. relevant changes will be communicated via a customer product/process change noti?cation (cpcn). definitions short-form specification ? the data in a short-form specification is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values definition ? limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the specification is not implied. exposure to limiting values for extended periods may affect device reliability. application information ? applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. disclaimers life support applications ? these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes ? philips semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. when the product is in full production (status production), relevant changes will be communicated via a customer product/process change notification (cpcn). philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
? koninklijke philips electronics n.v. 2003 sca75 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not con vey nor imply any license under patent- or other industrial or intellectual property rights. philips semiconductors C a worldwide company contact information for additional information please visit http://www.semiconductors.philips.com . fax: +31 40 27 24825 for sales of?ces addresses send e-mail to: sales.addresses@www.semiconductors.philips.com . printed in the netherlands r77/05/pp 13 date of release: 2003 sep 30 document order number: 9397 750 11768

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